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T14L1024N PDF预览

T14L1024N

更新时间: 2024-11-09 22:09:03
品牌 Logo 应用领域
TMT /
页数 文件大小 规格书
13页 89K
描述
128K X 8 HIGH SPEED CMOS STATIC RAM

T14L1024N 数据手册

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TE  
tmCH  
T14L1024N  
128K X 8 HIGH SPEED  
CMOS STATIC RAM  
SRAM  
FEATURES  
GENERAL DESCRIPTION  
The T14L1024N is a one-megabit density, fast  
static random access memory organized as  
131,072 words by 8 bits. It is designed for  
use in high performance memory applications  
such as main memory storage and high speed  
communication buffers. Fabricated using high  
performance CMOS technology, access times  
down to 10ns are achieved.  
Fast Address Access Times : 10/12/15ns  
Single 3.3V ±0.3V power supply  
Center power/ground pin configuration  
Low Power Consumption : 110/105/100mA  
TTL I/O compatible  
2.0V data retention mode  
Automatic power-down when deselected  
Available packages :  
BLOCK DIAGRAM  
- 32-pin 300 mil and 400 mil SOJ  
Vcc  
Vss  
- 32-pin TSOP 8x13.4mm and 8x20mm  
- 36-Ball CSP (8x10mm)  
CORE  
ARRAY  
A0  
DECODER  
.
.
.
PART NUMBER EXAMPLES  
.
PACKAGE  
SOJ 300mil  
SPEED  
A16  
T14L1024N-10J  
10ns  
10ns  
10ns  
10ns  
10ns  
T14L1024N-10W SOJ 400 mil  
T14L1024N-10P TSOP 8x13.4mm  
T14L1024N-10H TSOP 8x20mm  
T14L1024N-10C 36-Ball CSP  
CE  
I/O0  
.
.
.
DATA I/O  
WE  
OE  
I/O7  
PIN DESCRIPTION  
SYMBOL  
A0 - A16  
DESCRIPTION  
Address Inputs  
I/O0 - I/O7  
Data Inputs/Outputs  
Chip Select Inputs  
CE  
Write Enable  
Output Enable  
WE  
OE  
Vcc  
Vss  
Power Supply  
Ground  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P. 1  
Publication Date: APR. 2002  
Revision: C  

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