Datasheet > T1187P6

T1187P6

更新时间： 2024-11-29 01:16:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	101K
描述
Silicon PIN Photodiode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

T1187P6 数据手册

T1187P6

Vishay Semiconductors

www.vishay.com

Silicon PIN Photodiode

FEATURES

• Package type: chip

• Package form: single chip

• Dimensions (L x W x H in mm): 0.67 x 0.3 x 0.28

• Radiant sensitive area (in mm²): 0.053

• Peak sensitivity wavelength: 800 nm

• High photo sensitivity

• Suitable for visible light and near infrared

radiation

• Fast response times

• Angle of half sensitivity: ϕ = 60ꢀ

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

T1187P6 is a high speed and high sensitive PIN photodiode

chip with 0.053 mm²sensitive area detecting visible and

near infrared radiation. Anode and cathode are the bond

pads on top.

APPLICATIONS

• High speed photo detector

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

PRODUCT SUMMARY

COMPONENT

I_ra(μA)

ϕ (deg)

λ_0.5(nm)

T1187P6

0.66

580 to 1070

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

T1187P6-SD-F

Wafer sawn on foil with disco frame

MOQ: 330 000 pcs

Chip

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢀC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Junction temperature

T_j

100

ꢀC

Operating temperature range

Storage temperature range

Storage temperature range on foil

T_amb

T_stg1

T_stg2

-40 to +100

-40 to +50

ꢀC

Rev. 1.1, 14-Apr-15

Document Number: 84263

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与T1187P6相关器件

型号	品牌	获取价格	描述	数据表
T1187P6-SD-F	VISHAY	获取价格	Silicon PIN Photodiode
T-1188G	RHOMBUS-IND	获取价格	xDSL Transformer
T-1189G	RHOMBUS-IND	获取价格	xDSL Filter Inductor
T1189N	ETC	获取价格	PHASE CONTROL THYRISTORS
T1190	PULSE	获取价格	TELECOMMUNICATIONS PRODUCTS
T1190N	INFINEON	获取价格	Netz-Thyristor Phase Control Thyristor
T1190N12TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 2770A I(T)RMS, 1190000mA I(T), 1200V V(DRM), 1200V V(RRM), 1
T1190N12TOF VT	INFINEON	获取价格	T1190N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 75mm，高度
T1190N12TOF(VT)	INFINEON	获取价格	Silicon Controlled Rectifier,
T1190N12TOFVTXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 2770A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

与T1187P6相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

T1187P6

T1187P6 数据手册

与T1187P6相关器件

与T1187P6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

T1187P6

T1187P6 数据手册

与T1187P6相关器件

与T1187P6相关文章

您还可以找

您在本页遇到什么问题？