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T1190N18TOF

更新时间: 2024-11-28 15:53:23
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
10页 284K
描述
Silicon Controlled Rectifier, 2770A I(T)RMS, 1190000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element

T1190N18TOF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DISK BUTTON, O-XXDB-X3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.17标称电路换相断开时间:240 µs
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:250 mA最大直流栅极触发电压:2 V
最大维持电流:500 mAJESD-30 代码:O-XXDB-X3
最大漏电流:150 mA通态非重复峰值电流:25500 A
元件数量:1端子数量:3
最大通态电流:1190000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:2770 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

T1190N18TOF 数据手册

 浏览型号T1190N18TOF的Datasheet PDF文件第2页浏览型号T1190N18TOF的Datasheet PDF文件第3页浏览型号T1190N18TOF的Datasheet PDF文件第4页浏览型号T1190N18TOF的Datasheet PDF文件第5页浏览型号T1190N18TOF的Datasheet PDF文件第6页浏览型号T1190N18TOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T1190N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
1200  
1400  
1600 V  
1800 V  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
VDRM,VRRM  
1200  
1400  
1600 V  
1800 V  
Vorwärts-Stossspitzensperrspannung  
Tvj = -40°C... Tvj max  
VDSM  
non-repetitivepeak forward off-state voltage  
1300  
1500  
1700 V  
1900 V  
Rückwärts-Stossspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
2800 A  
1190 A  
1760 A  
2770 A  
Durchlassstrom-Grenzeffektivwert  
maximum RMS on-state current  
ITRMSM  
ITAVM  
Dauergrenzstrom  
average on-state current  
TC = 85 °C  
Dauergrenzstrom  
average on-state current  
TC = 55 °C, θ = 180°sin, tP = 10 ms ITAVM  
Durchlaßstrom-Effektivwert  
RMS on-state current  
ITRMS  
25500 A  
22500 A  
Tvj = 25 °C °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
Stossstrom-Grenzwert  
surge current  
ITSM  
3250 10³ A²s  
2530 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
200 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
1000 V/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Durchlassspannung  
on-state voltage  
max.  
max.  
2,05 V  
1,06 V  
Tvj = Tvj max, iT = 5,4 kA  
Tvj = Tvj max, iT = 1,0 kA  
vT  
0,90 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,190 mΩ  
Ersatzwiderstand  
slope resistance  
Durchlasskennlinie  
on-state characteristic  
300 A iT 6000 A  
A=  
7,528E-01  
B=  
C=  
D=  
1,682E-04  
-1,035E-02  
6,509E-03  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
max.  
2 V  
Nicht zündender Steuerstrom  
gate non-trigger current  
Tvj = Tvj max, vD = 12V  
Tvj = Tvj max, vD = 0,5 VDRM  
max.  
max.  
20 mA  
10 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max, vD = 0,5 VDRM  
Tvj = 25°C, vD = 12V  
max.  
0,2 V  
Haltestrom  
holding current  
max.  
500 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
IL  
max. 2500 mA  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
150 mA  
4 µs  
vD = VDRM, vR = VRRM  
Zündverzug  
gate controlled delay time  
DIN IEC 60747-6  
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs  
H.Sandmann  
date of publication: 2008-09-18  
prepared by:  
revision:  
2.0  
approved by: M.Leifeld  
A 52/08  
Seite/page  
1/10  
IFBIP D AEC, 2008-09-18, H.Sandmann  

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