Datasheet > T0900EB45A

T0900EB45A

更新时间： 2024-11-25 21:18:39

品牌	Logo	应用领域
IXYS		栅晶体管
页数	文件大小	规格书
8页	409K
描述
Insulated Gate Bipolar Transistor, 900A I(C), 4500V V(BR)CES, N-Channel,

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技术参数
数据手册

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T0900EB45A 技术参数

生命周期：	Transferred	包装说明：	DISK BUTTON, O-CXDB-X3
Reach Compliance Code：	unknown	风险等级：	5.73
最大集电极电流 (IC)：	900 A	集电极-发射极最大电压：	4500 V
配置：	SINGLE WITH BUILT-IN DIODE	JESD-30 代码：	O-CXDB-X3
元件数量：	1	端子数量：	3
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
晶体管元件材料：	SILICON	标称断开时间 (toff)：	4300 ns
标称接通时间 (ton)：	5600 ns	Base Number Matches：	1

T0900EB45A 数据手册

Date:- 30 Oct, 2008

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Provisional Data

Insulated Gate Bi-Polar Transistor

Type T0900EB45A

Absolute Maximum Ratings

MAXIMUM

LIMITS

4500

VOLTAGE RATINGS

UNITS

V_CES

V_{DC link}

V_GES

Collector – emitter voltage

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

2800

±20

MAXIMUM

LIMITS

900

RATINGS

UNITS

I_C(DC)

I_CRM

I_F(DC)

I_FRM

I_FSM

I_FSM2

P_MAX

(di/dt)_cr

T_j

Continuous DC collector current, IGBT

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

1800

900

1800

14.2

15.6

A/µs

°C

7.1

2500

Operating temperature range.

Storage temperature range.

-40 to +125

T_stg

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 250nH.

4) Half-sinewave, 125°C T_jinitial.

Provisional Data Sheet T0900EB45A Issue 1

Page 1 of 8

October, 2008

12 3 4 5 6 7 8

中文翻译

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