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T0952-6BQ PDF预览

T0952-6BQ

更新时间: 2024-11-05 21:10:23
品牌 Logo 应用领域
TEMIC /
页数 文件大小 规格书
6页 50K
描述
RF/Microwave Amplifier, 1 Func,

T0952-6BQ 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.76
JESD-609代码:e0安装特点:SURFACE MOUNT
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP8,.19
电源:2.8 V子类别:RF/Microwave Amplifiers
最大压摆率:20 mA表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

T0952-6BQ 数据手册

 浏览型号T0952-6BQ的Datasheet PDF文件第2页浏览型号T0952-6BQ的Datasheet PDF文件第3页浏览型号T0952-6BQ的Datasheet PDF文件第4页浏览型号T0952-6BQ的Datasheet PDF文件第5页浏览型号T0952-6BQ的Datasheet PDF文件第6页 
T0952  
SiGe – Low-Noise Amplifier (1900 MHz)  
Description  
The T0952 is a low-noise amplifier (LNA) in SiGe mance. The medium and high gain is  
technology. This low-noise amplifier includes the possi- very precise and has max. +/– 2.0 dB  
bility to apply a gain switching through control input pins, gain variation over full temperature- and supply voltage  
and provides a power-down mode function for extending range.  
the battery operating time. Also a calibration mode is  
available for improved output matching.  
In low gain mode the output drive capability is not  
reduced, resulting in improved intermodulation perfor-  
Electrostatic sensitive device.  
Observe precautions for handling.  
FD eIantpuutrferesquency 1800 to 2000 MHz  
D Precise high gain (26 dB, +/– 2.0 dB)  
D Power-down function  
D Low noise figure (< 3 dB)  
D Low-/ medium-/ high gain mode  
D Precise medium gain (18 dB, +/– 2.0 dB)  
D High reverse isolation (>40 dB)  
D Small package (SSOP8)  
Block Diagram  
Vcc  
CG2  
Pdown  
4
CG1  
8
3
7
Bandgap  
5
1
RF  
RF  
in  
out  
2
6
GND  
GND  
Figure 1. Block diagram  
Ordering Information  
Extended Type Number  
T0952-6BQ  
Package  
Remarks  
TSSOP8L  
Taped and reeled  
Rev. A2, 15-Mar-01  
1 (6)  
Preliminary Information  

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