Datasheet > T0960VC17G

T0960VC17G

更新时间： 2024-11-06 14:56:11

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力特 - LITTELFUSE		双极性晶体管
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T0960VC17G 数据手册

Date:- 30 Nov, 2016

Data Sheet Issue:- P1

Tentative data

Insulated Gate Bi-Polar Transistor

Type T0960VC17G

Absolute Maximum Ratings

MAXIMUM

VOLTAGE RATINGS

LIMITS

UNITS

V_CES

Collector – emitter voltage

1700

900

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

±20

MAXIMUM

LIMITS

RATINGS

UNITS

I_C

DC collector current, IGBT

960

1920

I_CRM

I_F(DC)

I_FRM

I_FSM

I_FSM2

P_MAX

(di/dt)_cr

T_j

Repetitive peak collector current, t_p=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, t_p=1ms, Diode

Peak non-repetitive surge t_p=10ms, V_RM=60%V_RRM, Diode (Note 4)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

960

1920

5635

6200

2.96

A/µs

°C

6000

Operating temperature range.

-40 to +125

T_stg

Storage temperature range.

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 150nH.

4) Half-sinewave, 125°C T_jinitial.

Tentative Data Sheet T0960VC17G Issue P1

Page 1 of 5

November, 2016

12 3 4 5 6

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