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SZBZX84C3V6ET1G PDF预览

SZBZX84C3V6ET1G

更新时间: 2024-11-28 12:46:55
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 157K
描述
Zener Voltage Regulators 225 mW SOT−23 Surface Mount

SZBZX84C3V6ET1G 技术参数

是否无铅: 不含铅生命周期:Active
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.76二极管类型:ZENER DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SZBZX84C3V6ET1G 数据手册

 浏览型号SZBZX84C3V6ET1G的Datasheet PDF文件第2页浏览型号SZBZX84C3V6ET1G的Datasheet PDF文件第3页浏览型号SZBZX84C3V6ET1G的Datasheet PDF文件第4页浏览型号SZBZX84C3V6ET1G的Datasheet PDF文件第5页浏览型号SZBZX84C3V6ET1G的Datasheet PDF文件第6页 
BZX84CxxxET1G Series,  
SZBZX84CxxxET1G Series  
Zener Voltage Regulators  
225 mW SOT23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
Specification Features  
225 mW Rating on FR4 or FR5 Board  
Zener Breakdown Voltage Range 2.4 V to 75 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Peak Power 225 W (8 X 20 ms)  
SOT23  
CASE 318  
STYLE 8  
3
1
Cathode  
Anode  
AECQ101 Qualified and PPAP Capable  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
MARKING DIAGRAM  
PbFree Packages are Available*  
xxx M G  
Mechanical Characteristics  
G
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V0  
1
xxx  
M
G
= Device Code  
= Date Code*  
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
ORDERING INFORMATION  
@ T 25C  
L
Device  
Package  
Shipping  
Total Power Dissipation on FR5 Board,  
P
D
(Note 2) @ T = 25C  
225  
1.8  
556  
mW  
mW/C  
C/W  
A
BZX84CxxxET1G  
SOT23  
(PbFree)  
3,000 /  
Derated above 25C  
Tape & Reel  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
SZBZX84CxxxET1G SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 3) @ T = 25C  
300  
2.4  
417  
mW  
mW/C  
C/W  
A
Derated above 25C  
BZX84CxxxET3G  
SOT23  
10,000 /  
Tape & Reel  
Thermal Resistance, JunctiontoAmbient  
R
q
(PbFree)  
JA  
Junction and Storage Temperature Range  
T , T  
65 to  
+150  
C  
SZBZX84CxxxET3G SOT23  
(PbFree)  
10,000 /  
Tape & Reel  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 9.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR5 = 1.0 X 0.75 X 0.62 in.  
DEVICE MARKING INFORMATION  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 Rev. 8  
BZX84C2V4ET1/D  
 

SZBZX84C3V6ET1G 替代型号

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SZBZX84C3V6LT1G ONSEMI

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