Datasheet > SWI4N60V

SWI4N60V

更新时间： 2024-09-15 08:57:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	918K
描述
N-channel MOSFET

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中文翻译

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数据手册

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SWI4N60V 数据手册

SAMWIN

SW4N60V

N-channel MOSFET

BV_DSS: 600V

Features

TO-251

I_D

: 4.0A

■ High ruggedness

R_DS(ON): 2.5ohm

■ R_DS(ON)(Max 2.5 Ω)@V_GS=10V

■ Gate Charge (Typ 25nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

Order Codes

Item

Sales Type

Marking

Package

TO-251

Packaging

TUBE

SW I 4N60V

SW4N60V

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

600

4.0

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

2.2

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

± 30

210

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

10.6

4.5

P_D

T_STG, T_J

T_L

0.38

-55 ~ + 150

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Symbol

Parameter

Value

Unit

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

2.6

0.5

^oC/W

Thermal resistance, Junction to ambient

100

Dec. 2011. Rev. 1.0

1/7

12 3 4 5 6 7

中文翻译

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