Datasheet > SWI4N65

SWI4N65

更新时间： 2024-11-05 08:57:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	749K
描述
N-channel MOSFET (TO-251 , TO-252)

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中文翻译

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数据手册

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SWI4N65 数据手册

SAMWIN

SW4N65

N-channel MOSFET

TO-251

TO-252

BV_DSS: 650V

Features

I_D

: 4.0A

■ High ruggedness

R_DS(ON): 2.6ohm

■ R_DS(ON)(Max 2.6 Ω)@V_GS=10V

■ Gate Charge (Typ 19nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

Order Codes

Item

Sales Type

SW I 4N65

SW D 4N65

Marking

SW4N65

Package

TO-251

TO-252

Packaging

TUBE

REEL

Absolute maximum ratings

Value

Symbol

Parameter

Unit

TO-251

650

V_DSS

I_D

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

4.0

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

2.6

I_DM

V_GS

E_AS

(note 1)

Gate to Source Voltage

± 30

143

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

10.6

4.5

P_D

T_STG, T_J

T_L

0.43

-55 ~ + 150

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

2.3

R_thjc

R_thja

Thermal resistance, Junction to case

Thermal resistance, Junction to ambient

^oC/W

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

中文翻译

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