Datasheet > SWI50N06A

SWI50N06A

更新时间： 2024-09-15 11:57:27

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	494K
描述
N-channel MOSFET (TO-251 , TO-252)

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中文翻译

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SWI50N06A 数据手册

SAMWIN

SW50N06A

N-channel MOSFET

BV_DSS: 60V

TO-251

TO-252

Features

I_D

: 50A

■ High ruggedness

■ R_DS(ON)(Max 0.023 Ω)@V_GS=10V

■ Gate Charge (Typ 30nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 0.023 ohm

1. Gate 2. Drain 3. Source

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant

topology like a electronic ballast, and also low power switching mode power appliances.

Order Codes

Item

Sales Type

SW I 50N06A

SW D 50N06A

Marking

Package

TO-251

TO-252

Packaging

TUBE

SW50N06A

REEL

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

Drain current pulsed

I_DM

V_GS

E_AS

(note 1)

200

Gate to Source Voltage

± 20

780

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

W/^oC

^oC

E_AR

dv/dt

108

P_D

T_STG, T_J

T_L

0.86

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

*. Drain current is limited by junction temperature.

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

1.15

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to sink

^oC/W

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

12 3 4 5 6 7

中文翻译

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