Datasheet > SWI30N06

SWI30N06

更新时间： 2024-09-13 08:57:31

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
7页	431K
描述
N-channel MOSFET

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中文翻译

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数据手册

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SWI30N06 数据手册

SAMWIN

SW30N06

N-channel MOSFET

BV_DSS: 60V

TO-220

TO-251

TO-252

Features

I_D

: 30A

■ High ruggedness

■ R_DS(ON)(Max 0.036 Ω)@V_GS=10V

■ Gate Charge (Typ 20nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON): 0.036 ohm

1. Gate 2. Drain 3. Source

General Description

These N-channel enhancement mode power field effect transistors are produced using

SAMWIN’s proprietary, planar stripe, DMOS technology.

This advanced technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers

Order Codes

Item

Sales Type

SW P 30N06

SW I 30N06

SW D 30N06

Marking

Package

TO-220

TO-251

TO-252

Packaging

TUBE

SW30N06

TUBE

REEL

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DSS

I_D

Drain to Source Voltage

Continuous Drain Current (@T_C=25^oC)

Continuous Drain Current (@T_C=100^oC)

I_DM

V_GS

E_AS

Drain current pulsed

(note 1)

120

Gate to Source Voltage

± 20

178

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

V/ns

E_AR

dv/dt

4.0

7.0

P_D

T_STG, T_J

T_L

0.57

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

2.85

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

Thermal resistance, Junction to ambient

110

May. 2011. Rev. 3.0

1/7

12 3 4 5 6 7

中文翻译

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