Ordering number : EN2195H
SVC203C
Diffused Junction Type Silicon Diode
Varactor Diode for FM Low-Voltage
Electronic Tuning Use
SVC203C
Features
• Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.
•
Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).
•
Applicable to FM wide band due to high capacitance ratio (V =1.5 to 9V).
R
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
R
Conditions
Ratings
Unit
V
Reverse Voltage
V
16
Junction Temperature
Storage Temperature
Tj
125
°C
°C
Tstg
--55 to +125
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Breakdown Voltage
Symbol
Conditions
Unit
min
max
V
I
=1μA
R
16
V
(BR)R
Reverse Current
I
V
V
V
V
V
=10V
50
65.98
25.11
13.40
nA
pF
pF
pF
R
R
R
R
R
R
C
C
C
=1.0V, f=1MHz
=6.0V, f=1MHz
=9.0V, f=1MHz
=3.0V, f=100MHz
58.80
18.72
10.84
60
1.0V
6.0V
9.0V
Interterminal Capacitance *
Quality Factor
Q
Capacitance Ratio
CR
C1.0V / C9.0V
4.6
V
V
V
=1.0V
R
=6.0V
R
=9.0V
R
6.5
5.5
%
%
%
(Cmax -- Cmin)
Cmin
Matching Tolerance
ΔCm
✕100
11.8
* Capacitance value of one diode
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the performance, characteristics, and functions of the described products in the independent state, and are not
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42209VA MS IM TC-00001954 / 31504 TS IM / O0397 GI / 52595 GI (KOTO) 1200 MO / O268 MO / 6187 AT, TS 8-9952 No.2195-1/4