Datasheet > SUR50N025-05P

SUR50N025-05P

更新时间： 2024-02-14 20:07:44

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	97K
描述
N-Channel 25-V (D-S) MOSFET

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SUR50N025-05P 数据手册

SUR50N025-05P

New Product

Vishay Siliconix

N-Channel 25-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)^{a, e}

Q_g(Typ)

D 100% R_gTested

D RoHS Compliant

APPLICATIONS

0.0052 @ V = 10 V

30 nC

0.0076 @ V = 4.5 V

D DC/DC Conversion, Low-Side

− Desktop PC

− Notebook PC

TO-252

Reverse Lead DPAK

Drain Connected to Tab

Top View

Ordering Information:

N-Channel MOSFET

SUR50N025-05P—E3 (Lead (Pb)-Free)

SUR50N025-05P-T4—E3 (Lead (Pb)-Free, alternate tape orientation)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

a, e

= 25_C

= 70_C

= 25_C

= 70_C

a, e

Continuous Drain Current (T = 175__C)

b, c

Pulsed Drain Current

100

= 25_C

Continuous Source-Drain Diode Current

b, c

7.7

Avalanche Current Pulse

L = 0.1 mH

Single Pulse Avalanche Energy

101

= 25_C

= 70_C

= 25_C

= 70_C

Maximum Power Dissipation

b, c

11.5

b, c

8.0

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

b, d

Maximum Junction-to-Ambient

t p 10 sec

thJA

thJC

C/W

Maximum Junction-to-Case

Steady State

1.5

1.8

Notes:

a. Based on T = 25_C.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 10 sec

d. Maximum under steady state conditions is 90 _C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 50 A.

Document Number: 73379

s-50933—Rev. A, 09-May-05

www.vishay.com

12 3 4 5 6

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