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SUR50N025-05P-T4-E3 PDF预览

SUR50N025-05P-T4-E3

更新时间: 2024-01-10 15:56:44
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 97K
描述
N-Channel 25-V (D-S) MOSFET

SUR50N025-05P-T4-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
雪崩能效等级(Eas):101 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):89 A最大漏极电流 (ID):36 A
最大漏源导通电阻:0.0052 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):83 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SUR50N025-05P-T4-E3 数据手册

 浏览型号SUR50N025-05P-T4-E3的Datasheet PDF文件第2页浏览型号SUR50N025-05P-T4-E3的Datasheet PDF文件第3页浏览型号SUR50N025-05P-T4-E3的Datasheet PDF文件第4页浏览型号SUR50N025-05P-T4-E3的Datasheet PDF文件第5页浏览型号SUR50N025-05P-T4-E3的Datasheet PDF文件第6页 
SUR50N025-05P  
New Product  
Vishay Siliconix  
N-Channel 25-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)a, e  
Qg (Typ)  
D 100% Rg Tested  
D RoHS Compliant  
APPLICATIONS  
0.0052 @ V = 10 V  
89  
80  
GS  
25  
30 nC  
0.0076 @ V = 4.5 V  
GS  
D DC/DC Conversion, Low-Side  
Desktop PC  
Notebook PC  
TO-252  
Reverse Lead DPAK  
D
G
Drain Connected to Tab  
G
D
S
Top View  
S
Ordering Information:  
N-Channel MOSFET  
SUR50N025-05P—E3 (Lead (Pb)-Free)  
SUR50N025-05P-T4—E3 (Lead (Pb)-Free, alternate tape orientation)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
25  
DS  
V
"20  
GS  
a, e  
T
T
= 25_C  
= 70_C  
= 25_C  
= 70_C  
89  
C
a, e  
75  
C
Continuous Drain Current (T = 175__C)  
I
J
D
b, c  
T
A
36  
b, c  
30  
T
A
A
Pulsed Drain Current  
I
100  
55  
DM  
T
C
= 25_C  
= 25_C  
Continuous Source-Drain Diode Current  
I
S
b, c  
T
A
7.7  
Avalanche Current Pulse  
I
AS  
45  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
101  
mJ  
AS  
a
T
T
= 25_C  
= 70_C  
= 25_C  
= 70_C  
83  
C
a
58  
C
Maximum Power Dissipation  
P
W
D
b, c  
T
A
11.5  
b, c  
T
A
8.0  
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
b, d  
Maximum Junction-to-Ambient  
t p 10 sec  
R
10  
13  
thJA  
thJC  
_
C/W  
Maximum Junction-to-Case  
Steady State  
R
1.5  
1.8  
Notes:  
a. Based on T = 25_C.  
C
b. Surface mounted on 1” x 1” FR4 board.  
c. t = 10 sec  
d. Maximum under steady state conditions is 90 _C/W.  
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
1

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