Datasheet > STW65N045M9-4

STW65N045M9-4

更新时间： 2023-12-20 18:45:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	351K
描述
N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package

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STW65N045M9-4 数据手册

STW65N045M9-4

Electrical characteristics

T_C= 25 °C unless otherwise specified.

Table 4. On-/off-states

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

= 0 V, I = 1 mA

Drain-source breakdown voltage

650

(BR)DSS

= 0 V, V = 650 V

Zero gate voltage drain current

µA

DSS

= 0 V, V = 650 V, T = 125 °C⁽¹⁾

200

= 0 V, V = ±25 V

Gate-body leakage current

Gate threshold voltage

±100

4.2

GSS

= V , I = 250 µA

3.2

3.7

GS(th)

DS(on)

= 10 V, I = 28 A

Static drain-source on-resistance

mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol

Parameter

Input capacitance

Test conditions

Min.

Typ.

4610

Max. Unit

iss

= 400 V, f = 1 MHz, V = 0 V

oss

Output capacitance

(1)

= 0 to 400 V, V = 0 V

oss eq.

Equivalent output capacitance

Intrinsic gate resistance

Total gate charge

885

f = 1 MHz, open drain

= 400 V, I = 28 A, V = 0 to 10 V

Gate-source charge

Gate-drain charge

26.5

23.5

(see Figure 14. Test circuit for gate

charge behavior)

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0

oss DS

to stated value.

Table 6. Switching times

Test conditions

Symbol

Parameter

Turn-on delay time

Min.

Typ. Max. Unit

= 325 V, I = 28 A,

d(on)

= 4.7 Ω, V = 10 V

Rise time

(see Figure 13. Switching times

test circuit for resistive load and

Figure 18. Switching time waveform)

Turn-off delay time

Fall time

d(off)

DS14303 - Rev 1

page 3/12

1 234 5 6 7...12

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