Datasheet > STW48NM60N

STW48NM60N

更新时间： 2024-09-30 12:26:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	717K
描述
N-channel 600 V, 0.055 Î© typ., 44 A MDmeshâ¢ II Power MOSFET in a TO-247 package

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STW48NM60N 数据手册

STW48NM60N

N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET

in a TO-247 package

Datasheet — production data

Features

V_DSS

T_Jmax

R_DS(on)

max

Order codes

I_D

STW48NM60N

650 V

< 0.07 Ω

44 A

■

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

TO-247

Applications

■

Switching applications

Figure 1.

Internal schematic diagram

Description

'ꢅꢆꢇ

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

*ꢅꢁꢇ

6ꢅꢈꢇ

$0ꢀꢁꢂꢃꢄYꢁ

Table 1.

Order code

STW48NM60N

Device summary

Marking

Package

TO-247

Packaging

48NM60N

Tube

February 2013

Doc ID 18313 Rev 5

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

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STW48NM60N 替代型号

型号	品牌	替代类型	描述	数据表
STW48N60M2	STMICROELECTRONICS	类似代替	N沟道600 V、0.06 Ohm典型值、42 A MDmesh M2功率MOSFET，T
FCH47N60N	ONSEMI	功能相似	功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，47 A，62 m
FCH47N60N	FAIRCHILD	功能相似	N-Channel MOSFET

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