Datasheet > STW50N65DM2AG

STW50N65DM2AG

更新时间： 2024-10-01 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	270K
描述
汽车级N沟道650 V、0.070 Ohm典型值、38 A MDmesh DM2功率MOSFET，TO-247封装

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STW50N65DM2AG 数据手册

STW50N65DM2AG

Datasheet

Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A

Power MOSFET MDmesh DM2 in a TO-247 package

Features

DS(on)

max.

Order code

STW50N65DM2AG

650 V

87 mΩ

38 A

•

AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

TO-247

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

Applications

G(1)

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

S(3)

NG1D2TS3Z

Product status link

STW50N65DM2AG

Product summary⁽¹⁾

Order code

Marking

STW50N65DM2AG

50N65DM2

TO-247

Package

Packing

Tube

1. The HTRB test was performed at 80%

in compliance with AEC-Q101

(BR)DSS

rev. C. All the other tests were

performed according to rev. D.

DS11149 - Rev 3 - August 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...12

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