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STTH6006TV1 PDF预览

STTH6006TV1

更新时间: 2024-01-15 07:53:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管测试高压局域网超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 75K
描述
HIGH FREQUENCY SECONDARY RECTIFIER

STTH6006TV1 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:ISOTOP包装说明:ROHS COMPLIANT, PLASTIC, ISOTOP-4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:31 weeks风险等级:2.27
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:HIGH VOLTAGE ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:210 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向电流:800 µA最大反向恢复时间:0.07 µs
反向测试电压:600 V子类别:Other Diodes
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH6006TV1 数据手册

 浏览型号STTH6006TV1的Datasheet PDF文件第2页浏览型号STTH6006TV1的Datasheet PDF文件第3页浏览型号STTH6006TV1的Datasheet PDF文件第4页浏览型号STTH6006TV1的Datasheet PDF文件第5页浏览型号STTH6006TV1的Datasheet PDF文件第6页 
STTH6003TV/CW  
HIGH FREQUENCY SECONDARY RECTIFIER  
MAJOR PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
2 x 30 A  
300 V  
1 V  
A1  
A2  
K1  
K2  
A1  
A2  
K
VF (max)  
trr (max)  
K1  
55 ns  
A1  
FEATURES AND BENEFITS  
COMBINES HIGHEST RECOVERY AND  
VOLTAGEPERFORMANCE  
K2  
A2  
K
ULTRA-FAST, SOFT AND NOISE-FREE  
RECOVERY  
A2  
A1  
INSULATEDPACKAGE: ISOTOP  
Insulationvoltage: 2500 VRMS  
Capacitance:< 45 pF  
LOW INDUCTANCE AND LOW CAPACI-  
TANCE ALLOW SIMPLIFIED LAYOUT  
ISOTOP  
STTH6003TV  
TO-247  
STTH6003CW  
DESCRIPTION  
Dual rectifiers suited for Switch Mode Power  
Supplyand high frequencyDC to DC converters.  
frequency inverters, free wheeling operation,  
welding equipmentsand telecom power supplies.  
Packaged either in ISOTOP or in TO-247, this  
device is intended for use in low voltage, high  
ABSOLUTE RATINGS  
Symbol  
(limitingvalues, per diode)  
Parameter  
Value  
300  
100  
60  
Unit  
V
VRRM  
IF(RMS)  
IF(RMS)  
IF(AV)  
Repetitivepeak reverse voltage  
A
RMS forward current  
RMS forward current  
Average forward current  
ISOTOP  
TO-247  
A
30  
60  
A
ISOTOP Tc = 95°C Per diode  
δ = 0.5  
Tc =135°C Per diode  
δ = 0.5 Per device  
ISOTOP tp = 10 ms sinusoidal  
Per device  
30  
60  
A
TO-247  
IFSM  
400  
A
A
Surge non repetitive forward  
current.  
300  
4
TO-247  
tp = 10 ms sinusoidal  
tp =100 µs square  
ISOTOP  
IRSM  
Tstg  
A
Non repetitive peak reverse current  
Storage temperaturerange  
- 55 to + 150  
- 65 to + 175  
150  
°C  
°C  
°C  
°C  
TO-247  
Tj  
Maximum operatingjunction temperature  
ISOTOP  
175  
TO-247  
ISOTOP is a registered trademark of STMicroelectronics  
October 1999 - Ed: 5C  
1/6  

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