STTH60R04

更新时间： 2024-09-24 04:30:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管快恢复二极管超快恢复二极管
页数	文件大小	规格书
7页	104K
描述
Ultrafast recovery diode

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中文翻译

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STTH60R04 数据手册

STTH60R04

Ultrafast recovery diode

Main product characteristics

I_F(AV)

V_RRM

T_j

60 A

400 V

175° C

0.95 V

31 ns

V_F(typ)

t_{rr (typ)}

Features and benefits

■ Very low switching losses

■ High frequency and/or high pulsed current

DO-247

STTH60R04W

operation

■ High junction temperature

Description

The STTH60R04 series uses ST's new 400 V

planar Pt doping technology. The STTH60R04 is

specially suited for switching mode base drive and

transistor circuits.

Order codes

Part Number

STTH60R04W

Marking

Available in a through-the-hole package, this

device is intended for use in low voltage, high

frequency inverters, free wheeling and polarity

protection.

STTH60R04W

Table 1.

Symbol

Absolute ratings (limiting values at 25° C, unless otherwise specified)

Parameter

Value

Unit

V_RRM

V_RSM

Repetitive peak reverse voltage

400

Non repetitive peak reverse voltage

I_F(RMS)RMS forward current

100

I_F(AV)

I_FRM

I_FSM

T_stg

T_j

Average forward current, δ = 0.5

Repetitive peak forward current

T_c= 110° C

t_p= 5 µs F = 1 kHz square

375

Surge non repetitive forward current t_p= 10 ms Sinusoidal

Storage temperature range

650

-65 to +175

-40 to +175

° C

Operating junction temperature range

March 2007

Rev 1

1/7

www.st.com

12 3 4 5 6 7

中文翻译

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