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STTH6012W PDF预览

STTH6012W

更新时间: 2024-01-25 16:14:41
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压PC局域网超快软恢复二极管高压超快速软恢复二极管
页数 文件大小 规格书
8页 109K
描述
Ultrafast recovery - 1200 V diode

STTH6012W 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-247包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180566Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:DO-247Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY
应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.95 VJEDEC-95代码:DO-247
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.125 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH6012W 数据手册

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STTH6012  
Ultrafast recovery - 1200 V diode  
Main product characteristics  
IF(AV)  
VRRM  
Tj  
60 A  
1200 V  
175° C  
1.30 V  
50 ns  
A
K
VF (typ)  
trr (typ)  
Features and benefits  
Ultrafast, soft recovery  
A
Very low conduction and switching losses  
K
High frequency and/or high pulsed current  
operation  
DO-247  
STTH6012W  
High reverse voltage capability  
High junction temperature  
Description  
The high quality design of this diode has  
produced a device with low leakage current,  
regularly reproducible characteristics and intrinsic  
ruggedness. These characteristics make it ideal  
for heavy duty applications that demand long term  
reliability.  
Order codes  
Part Number  
Marking  
STTH6012W  
STTH6012W  
Such demanding applications include industrial  
power supplies, motor control, and similar  
mission-critical systems that require rectification  
and freewheeling. These diodes also fit into  
auxiliary functions such as snubber, bootstrap,  
and demagnetization applications.  
The improved performance in low leakage  
current, and therefore thermal runaway guard  
band, is an immediate competitive advantage for  
this device.  
March 2006  
Rev 1  
1/8  
www.st.com  
8

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