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STTH4R02RL PDF预览

STTH4R02RL

更新时间: 2024-01-24 15:52:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管快恢复二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
13页 144K
描述
Ultrafast recovery diode

STTH4R02RL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMB, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:11 weeks
风险等级:1.65其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:70 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:200 V最大反向电流:3 µA
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

STTH4R02RL 数据手册

 浏览型号STTH4R02RL的Datasheet PDF文件第1页浏览型号STTH4R02RL的Datasheet PDF文件第2页浏览型号STTH4R02RL的Datasheet PDF文件第4页浏览型号STTH4R02RL的Datasheet PDF文件第5页浏览型号STTH4R02RL的Datasheet PDF文件第6页浏览型号STTH4R02RL的Datasheet PDF文件第7页 
STTH4R02  
Characteristics  
Table 3.  
Symbol  
Static electrical characteristics  
Parameter  
Test conditions  
Tj = 25° C  
Tj = 125° C  
Min.  
Typ  
Max.  
Unit  
3
(1)  
IR  
Reverse leakage current  
Forward voltage drop  
VR = VRRM  
µA  
2
20  
Tj = 25° C  
Tj = 25° C  
Tj = 150° C  
IF = 12 A  
1.15  
0.95  
0.76  
1.25  
1.05  
0.83  
(2)  
VF  
V
IF = 4 A  
1. Pulse test: tp = 5 ms, δ < 2 %  
2. Pulse test: tp = 380 µs, δ < 2 %  
To evaluate the conduction losses use the following equation:  
2
P = 0.67 x I  
+ 0.04 I  
F(AV)  
F (RMS)  
Table 4.  
Symbol  
Dynamic characteristics  
Parameter  
Test conditions  
Min. Typ Max. Unit  
IF = 1 A, dIF/dt = -50 A/µs,  
VR = 30 V, Tj = 25° C  
24  
16  
4.4  
80  
30  
20  
trr  
Reverse recovery time  
ns  
IF = 1 A, dIF/dt = -100 A/µs,  
VR = 30 V, Tj = 25° C  
IF = 4 A, dIF/dt = -200 A/µs,  
VR = 160 V, Tj = 125° C  
IRM  
tfr  
Reverse recovery current  
Forward recovery time  
5.5  
A
IF = 4 A, dIF/dt = 50 A/µs  
VFR = 1.1 x VFmax, Tj = 25° C  
ns  
IF = 4 A, dIF/dt = 50 A/µs,  
Tj = 25° C  
VFP  
Forward recovery voltage  
1.6  
V
Figure 1.  
peak current versus duty cycle  
Figure 2.  
Forward voltage drop versus  
forward current (typical values)  
IM(A)  
50  
IFM(A)  
100  
T
IM  
45  
40  
35  
30  
25  
20  
15  
10  
5
tp  
=tp/T  
δ
75  
50  
25  
P = 5 W  
Tj=150°C  
P = 2 W  
Tj=25°C  
P = 1 W  
δ
VFM(V)  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
3/13  

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