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STTA812G PDF预览

STTA812G

更新时间: 2024-11-24 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管高压
页数 文件大小 规格书
10页 93K
描述
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

STTA812G 数据手册

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STTA812D/DI/G  
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE  
MAIN PRODUCT CHARACTERISTICS  
K
IF(AV)  
VRRM  
8A  
1200V  
50ns  
2.0V  
trr (typ)  
VF (max)  
A
A
K
K
TO-220AC Ins.  
STTA812DI  
TO-220AC  
STTA812D  
FEATURES AND BENEFITS  
ULTRA-FAST, SOFT RECOVERY.  
K
VERY LOW OVERALL POWER LOSSES IN  
BOTH THE DIODE AND THE COMPANION  
TRANSISTOR.  
HIGH FREQUENCY AND/OR HIGH PULSED  
CURRENT OPERATION.  
A
NC  
HIGH REVERSE VOLTAGECAPABILITY  
D2PAK  
STTA812G  
INSULATEDPACKAGE: TO-220ACIns.  
Electricalinsulation : 2500VRMS  
Capacitance: 7pF.  
DESCRIPTION  
TURBOSWITCH 1200V drastically cuts losses in  
all highvoltage operationswhich requireextremely  
fast, soft and noise-free power diodes. Due to their  
optimized switching performancesthey also highly  
decrease power losses in any associated  
switching IGBT or MOSFET in all ”freewheel  
mode” operations.  
They are particularly suitable in motor control  
circuitries, or in the primary of SMPS as snubber,  
clamping or demagnetizing diodes. They are also  
suitable for secondary of SMPS as high voltage  
rectifier diodes.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
1200  
1200  
30  
Unit  
V
VRSM  
Non repetitivepeak reverse voltage  
RMS forward current  
V
IF(RMS)  
TO-220AC/ D2PAK  
TO-220AC Ins.  
A
20  
A
IFRM  
IFSM  
Tstg  
Tj  
Repetitive peak forward current  
Surgenon repetitiveforward current  
Storage temperaturerange  
tp = 5 µs F = 5kHz square  
tp = 10ms sinusoidal  
110  
A
70  
A
- 65 to + 150  
150  
°C  
°C  
Maximum operating junction temperature  
TURBOSWITCH is a trademark of STMicroelectronics.  
November 1999 - Ed: 4C  
1/10  

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