STTA9012TV2

更新时间： 2024-01-04 12:48:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管高压
页数	文件大小	规格书
8页	74K
描述
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

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中文翻译

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数据手册
替代型号

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STTA9012TV2 数据手册

STTA9012TV1/2

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 45A

1200V

65ns

t_rr(typ)

V_F(max)

STTA9012TV1

STTA9012TV2

1.85V

FEATURES AND BENEFITS

ULTRA-FAST, SOFT RECOVERY.

VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION

TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED

CURRENT OPERATION.

HIGH REVERSE VOLTAGECAPABILITY.

LOW INDUCTANCE PACKAGE < 5 nH.

ISOTOP^TM

INSULATEDPACKAGE:

Electricalinsulation : 2500V_RMS

Capacitance: < 45pF.

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in

all high voltage operationswhich require extremely

fast, soft andnoise-free power diodes. Due to their

optimized switching performances they also highly

decrease power losses in any associated

switching IGBT or MOSFET in all ”freewheel

mode” operations.

They are particularly suitable in motor control

circuitries, or in the primary of SMPS as snubber,

clamping or demagnetizing diodes. They are also

suitable for secondary of SMPS as high voltage

rectifier diodes.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

V_RSM

I_F(RMS)

I_FRM

Parameter

Repetitive peak reverse voltage

Value

1200

Unit

Non repetitivepeak reverse voltage

RMS forward current

1200

150

Repetitive peak forward current

Surge non repetitive forward current

Storage temperature range

tp = 5 µs F = 5kHz square

700

I_FSM

tp = 10ms sinusoidal

420

T_stg

- 65 to + 150

150

°C

T_j

Maximum operatingjunction temperature

ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.

November1999 - Ed: 6B

1/8

12 3 4 5 6 7 8

中文翻译

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STTA9012TV2 替代型号

型号	品牌	替代类型	描述	数据表
STTH9012TV2	STMICROELECTRONICS	类似代替	Ultrafast recovery - 1200 V diode

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