5秒后页面跳转
STTB3006P PDF预览

STTB3006P

更新时间: 2024-11-25 21:21:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 超快软恢复二极管高压超快速软恢复二极管局域网
页数 文件大小 规格书
6页 50K
描述
30A, 600V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-2

STTB3006P 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
其他特性:SNUBBER DIODE, SOFT FACTOR IS 0.5, HIGH PERFORMANCE应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:700 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:60 W
认证状态:Not Qualified参考标准:CECC
最大重复峰值反向电压:600 V最大反向恢复时间:0.11 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STTB3006P 数据手册

 浏览型号STTB3006P的Datasheet PDF文件第2页浏览型号STTB3006P的Datasheet PDF文件第3页浏览型号STTB3006P的Datasheet PDF文件第4页浏览型号STTB3006P的Datasheet PDF文件第5页浏览型号STTB3006P的Datasheet PDF文件第6页 
STTB3006P(I)  
TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE  
PRELIMINARY DATA  
MAIN PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
30A  
600V  
60ns  
1.3V  
K
A
trr (typ)  
VF (max)  
FEATURES AND BENEFITS  
SPECIFIC TO THE FOLLOWING OPERA-  
TIONS: Snubbing or clamping, demagnetization  
and rectification.  
A
A
K
K
ULTRA-FAST,SOFT  
RECOVERY.  
VERY LOW OVERALL POWER LOSSES AND  
PARTICULARY LOW FORWARD VOLTAGE.  
AND  
NOISE-FREE  
Isolated  
DOP3I  
SOD93  
(Plastic)  
(Plastic)  
DESIGNED FOR HIGH PULSED CURRENT  
OPERATIONS.  
STTB3006PI  
STTB3006P  
CECC APPROVED.  
DESCRIPTION  
The TURBOSWITCH is a very high performance  
series of ultra-fast high voltage power diodes from  
600V to 1200V.  
TURBOSWITCH, B family, drastically cuts losses  
in all high voltage operations which require  
extremely fast, soft and noise-free power diodes.  
They are particularly suitable in the primary circuit  
of an SMPS as snubber, clamping or  
demagnetizing diodes, and also in most power  
converters as high performance rectifier diodes.  
Packaged in SOD93 and in isolated DOP3I, these  
600V devices are particularly intended for use on  
240V domestic mains.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VRRM  
VRSM  
IF(RMS)  
IFRM  
Parameter  
Repetitivepeak reverse voltage  
Non repetitive peak reverse voltage  
RMS forward current  
Value  
600  
Unit  
V
600  
V
50  
A
Repetitivepeak forward current (tp = 5 µs, f = 1kHz)  
Max operating junction temperature  
Storage temperature  
700  
A
Tj  
-65 to 150  
-65 to 150  
°C  
°C  
Tstg  
TM : TURBOSWITCH is a trademark ofSGS-THOMSON MICROELECTRONICS.  
1/6  
May 1995 - Ed : 2B  

与STTB3006P相关器件

型号 品牌 获取价格 描述 数据表
STTB306B STMICROELECTRONICS

获取价格

3A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3
STTB306B-TR STMICROELECTRONICS

获取价格

3A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3
STTB4-PVBU PHOENIX

获取价格

Modular Terminal Block,
STTB506B STMICROELECTRONICS

获取价格

5A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3
STTB506B-TR STMICROELECTRONICS

获取价格

5A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3
STTB506D STMICROELECTRONICS

获取价格

5A, 600V, SILICON, RECTIFIER DIODE, TO-220AC
STTB506F STMICROELECTRONICS

获取价格

5A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, ISOWATT220AC, 2 PIN
STTB506M STMICROELECTRONICS

获取价格

RECTIFIER DIODE,600V V(RRM),SO
STTB6006T2 STMICROELECTRONICS

获取价格

RECTIFIER DIODE,600V V(RRM),SOT-227A
STTB6006TV1 STMICROELECTRONICS

获取价格

30A, 600V, SILICON, RECTIFIER DIODE, PLASTIC, ISOTOP-4