STTH1002C

更新时间： 2024-10-01 21:54:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管功效
页数	文件大小	规格书
8页	115K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

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中文翻译

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STTH1002C 数据手册

STTH1002C

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)Up to 2 x 8A

V_RRM

200 V

175 °C

0.78 V

20 ns

Tj (max)

V_F(typ)

t_rr(typ)

FEATURES AND BENEFITS

TO-220AB

STTH1002CT

I²PAK

STTH1002CR

■

Suited for SMPS

Low losses

Low forward and reverse recovery times

Insulated package: TO-220FPAB

High junction temperature

Low leakage current

TO-220FPAB

STTH1002CFP

D²PAK

STTH1002CG

DESCRIPTION

Dual center tap rectifier suited for Switch Mode

Power Supplies and High frequency DC to DC

converters.

Packaged in DPAK, D²PAK, TO-220AB,

TO220-FPAB and I²PAK, this device is intended

for use in low voltage, high frequency inverters,

free wheeling and polarity protection applications.

DPAK

STTH1002CB

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

200

Unit

V_RRM

Repetitive peak reverse voltage

I_F(RMS)RMS forward current

TO-220AB / TO-220FPAB / I²PAK / D²PAK /

DPAK

I_F(AV)

Average forward

current δ =0.5

TO-220AB / I²PAK

Tc = 155°C Per diode

Tc = 150°C Per device

Tc = 135°C Per diode

Tc = 125°C Per device

Tc = 140°C Per diode

Tc = 120°C Per device

Tc = 110°C Per diode

/ D²PAK / DPAK

TO-220FPAB

Tc = 75°C

Per device

I_FSM

T_stg

Surge non repetitive forward current

Storage temperature range

tp = 10 ms Sinusoidal

- 65 + 175 °C

175 °C

Maximum operating junction temperature

March 2004 - Ed: 4

1/8

12 3 4 5 6 7 8

中文翻译

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