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STT6802

更新时间： 2024-01-06 19:46:16

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SECOS		/
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描述
3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET

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STT6802 数据手册

STT6802

3.3A , 30V , R_DS(ON)65 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSOP-6

DESCRIPTION

STT6802 utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The TSOP-6

package is universally used for all commercial-industrial

applications.

FEATURES

ꢁ

Simple Drive Requirement

Smaller Outline Package

Surface mount package

D G

Millimeter

Min. Max.

Millimeter

MARKING

REF.

Min.

Max.

2.70

2.60

1.40

3.10

3.00

1.80

0.10

0.60 REF.

0.12 REF.

6802

ꢀꢀꢀꢀ

Date Code

1.10 MAX.

1.90 REF.

0°

10°

0.95 REF.

0.30

0.50

TOP VIEW

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

3.3

Continuous Drain Current ³

I_D

2.6

Pulsed Drain Current ¹

Power Dissipation

I_DM

P _D

T_A=25°C

1.14

0.01

-55~150

Linear Derating Factor

W / °C

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Resistance Rating

Maximum Junction to Ambient ³

R_θJA

110

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 1 of 4

12 3 4

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