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STPS40M80CG-TR PDF预览

STPS40M80CG-TR

更新时间: 2024-11-02 17:33:31
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 114K
描述
80 V、40 A双路低压降功率肖特基整流器

STPS40M80CG-TR 数据手册

 浏览型号STPS40M80CG-TR的Datasheet PDF文件第2页浏览型号STPS40M80CG-TR的Datasheet PDF文件第3页浏览型号STPS40M80CG-TR的Datasheet PDF文件第4页浏览型号STPS40M80CG-TR的Datasheet PDF文件第5页浏览型号STPS40M80CG-TR的Datasheet PDF文件第6页浏览型号STPS40M80CG-TR的Datasheet PDF文件第7页 
STPS40M80C  
Power Schottky rectifier  
Features  
A1  
K
High junction temperature capability  
A2  
Optimized trade-off between leakage current  
K
K
and forward voltage drop  
Low leakage current  
A2  
Avalanche capability specified  
A2  
K
A1  
A1  
Description  
D2PAK  
STPS40M80CG-TR  
I2PAK  
STPS40M80CR  
This dual diode Schottky rectifier is suited for high  
frequency switch mode power supply.  
K
2
2
Packaged in TO-220AB, I PAK and D PAK, this  
device is particularly suited for use in notebook,  
game station, LCD TV and desktop adapters,  
providing these applications with a good  
efficiency at both low and high load.  
A2  
K
A1  
TO-220AB  
STPS40M80CT  
Table 1.  
Device summary  
Symbol  
IF(AV)  
VRRM  
Value  
(a)  
Figure 1.  
Electrical characteristics  
2 x 20 A  
80 V  
I
V
I
Tj (max)  
VF (typ)  
175 °C  
475 mV  
"Forward"  
2 x I  
X
O
I
F
I
O
X
V
AR  
RRM  
V
R
V
V
I
R
V
V
V
V
F F(2xI  
F(I  
)
)
o
To  
o
"Reverse"  
I
AR  
a. VARM and IARM must respect the reverse safe  
operating area defined in Figure 11. VAR and IAR are  
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,  
are static characteristics  
April 2011  
Doc ID 018718 Rev 1  
1/10  
www.st.com  
10  

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