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STPS41H100CR PDF预览

STPS41H100CR

更新时间: 2024-11-01 22:15:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管
页数 文件大小 规格书
6页 101K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS41H100CR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:I2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:11 weeks
风险等级:5.65Is Samacsys:N
应用:POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 VJESD-30 代码:R-PSIP-T3
JESD-609代码:e3最大非重复峰值正向电流:220 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS41H100CR 数据手册

 浏览型号STPS41H100CR的Datasheet PDF文件第2页浏览型号STPS41H100CR的Datasheet PDF文件第3页浏览型号STPS41H100CR的Datasheet PDF文件第4页浏览型号STPS41H100CR的Datasheet PDF文件第5页浏览型号STPS41H100CR的Datasheet PDF文件第6页 
®
STPS41H100CG/CT/CR  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCTS CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 20 A  
100 V  
K
Tj (max)  
VF (max)  
175 °C  
0.67 V  
FEATURES AND BENEFITS  
A2  
A2  
NEGLIGIBLE SWITCHING LOSSES  
LOW LEAKAGE CURRENT  
GOOD TRADE OFF BETWEEN LEAKAGE  
CURRENT AND FORWARD VOLTAGE DROP  
LOW THERMAL RESISTANCE  
K
K
A1  
A1  
I2PAK  
TO-220AB  
STPS41H100CT  
STPS41H100CR  
AVALANCHE CAPABILITY SPECIFIED  
K
DESCRIPTION  
Dual center tab Schottky rectifier suited for Switch  
Mode Power Supply and high frequency DC to DC  
converters.  
A2  
A1  
Packaged in D2PAK, I2PAK and TO-220AB, this  
device is intended for use in high frequency  
inverters.  
D2PAK  
STPS41H100CG  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
100  
V
IF(RMS)  
IF(AV)  
30  
A
RMS forward current  
20  
40  
Average forward current  
Tc = 150°C  
δ = 0.5  
Per diode  
A
Per device  
IFSM  
IRRM  
PARM  
Tstg  
220  
A
A
Surge non repetitive forward current  
Peak repetitive reverse current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10 ms sinusoidal  
tp=2 µs square F=1kHz  
tp = 1µs Tj = 25°C  
1
18100  
- 65 to + 175  
175  
W
°C  
°C  
V/µs  
Tj  
Maximum operating junction temperature *  
Critical rate of rise reverse voltage  
dV/dt  
10000  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed : 3A  
1/6  

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