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STPS3L60Q PDF预览

STPS3L60Q

更新时间: 2024-11-14 22:14:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管PC局域网
页数 文件大小 规格书
6页 72K
描述
POWER SCHOTTKY RECTIFIER

STPS3L60Q 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-15包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:6 weeks风险等级:1.23
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180437Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:DO-15Samacsys Released Date:2016-03-17 18:36:42
Is Samacsys:N其他特性:AVALANCHE CAPABILITY
应用:POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.59 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS3L60Q 数据手册

 浏览型号STPS3L60Q的Datasheet PDF文件第2页浏览型号STPS3L60Q的Datasheet PDF文件第3页浏览型号STPS3L60Q的Datasheet PDF文件第4页浏览型号STPS3L60Q的Datasheet PDF文件第5页浏览型号STPS3L60Q的Datasheet PDF文件第6页 
®
STPS3L60/Q/U  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
3 A  
60 V  
Tj (max)  
VF (max)  
150°C  
0.61 V  
DO-15  
STPS3L60Q  
DO-201AD  
STPS3L60  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
LOW THERMAL RESISTANCE  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
Axial and Surface Mount Power Schottky rectifier  
suited for Switch Mode Power Supplies and high  
frequency DC to DC converters. Packaged in  
DO-201AD, DO-15 and SMB, this device is  
intended for use in low voltage, high frequency  
inverters and small battery chargers.  
SMB  
STPS3L60U  
For applications where there are space  
constraints, e.g Telecom battery charger.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
60  
10  
3
IF(RMS)  
IF(AV)  
A
RMS forward current  
A
Average forward current  
TL = 105°C δ = 0.5  
(DO-201AD, SMB)  
TL = 75°C δ = 0.5  
(DO-15)  
IFSM  
PARM  
Tstg  
100  
2000  
A
W
Surge non repetitive forward current tp = 10 ms Sinusoidal  
Repetitive peak avalanche power  
Storage temperature range  
tp = 1µs Tj = 25°C  
- 65 to + 150  
150  
°C  
Tj  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 5A  
1/6  

STPS3L60Q 替代型号

型号 品牌 替代类型 描述 数据表
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