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STPS3L40SY PDF预览

STPS3L40SY

更新时间: 2024-11-15 13:14:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 100K
描述
Automotive 40 V, 3 A Low Drop Power Schottky Rectifier

STPS3L40SY 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, SMC, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:11 weeks风险等级:1.71
应用:POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.44 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS3L40SY 数据手册

 浏览型号STPS3L40SY的Datasheet PDF文件第2页浏览型号STPS3L40SY的Datasheet PDF文件第3页浏览型号STPS3L40SY的Datasheet PDF文件第4页浏览型号STPS3L40SY的Datasheet PDF文件第5页浏览型号STPS3L40SY的Datasheet PDF文件第6页浏览型号STPS3L40SY的Datasheet PDF文件第7页 
STPS3L40  
Power Schottky rectifier  
Main product characteristics  
A
IF(AV)  
VRRM  
3 A  
K
40 V  
SMC  
STPS3L40S  
Tj (max)  
VF(max)  
150° C  
0.44 V  
Features and Benefits  
Negligible switching losses  
Low thermal resistance  
Low forward voltage drop  
A
K
SMB flat  
STPS3L40UF  
Avalanche capability specified  
Description  
Order codes  
Schottky rectifier suited for switched mode power  
supplies and high frequency DC to DC  
converters. Packaged in SMC, and low profile  
SMB, this device is intended for use in DC/DC  
chargers.  
Part Number  
Marking  
STPS3L40S  
S3L4  
STPS3L40UF  
FS3L4  
Table 1.  
Symbol  
Absolute Ratings (limiting values)  
Parameter  
Value  
Unit  
VRRM  
IF(AV)  
Repetitive peak reverse voltage  
40  
V
SMC  
TL = 120° C δ = 0.5  
TL = 130° C δ = 0.5  
tp = 10 ms sinusoidal  
tp = 1 µs Tj = 25° C  
Average forward current  
3
A
SMB flat  
IFSM  
PARM  
Tstg  
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
75  
1300  
A
W
°C  
°C  
-65 to + 175  
150  
Tj  
Operating junction temperature (1)  
dPtot  
dTj  
1
---------------  
-------------------------  
1.  
<
condition to avoid thermal runaway for a diode on its own heatsink  
Rth(j a)  
February 2007  
Rev 3  
1/8  
www.st.com  
8

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