Datasheet > STPS10M80CG-TR

STPS10M80CG-TR

更新时间： 2024-09-30 08:59:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	138K
描述
Power Schottky rectifier

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STPS10M80CG-TR 数据手册

STPS10M80C

Power Schottky rectifier

Features

■ High junction temperature capability

■ Optimized trade-off between leakage current

and forward voltage drop

■ Low leakage current

■ Avalanche capability specified

■ Insulated package TO-220FPAB

– insulated voltage: 2000 V

D²PAK

STPS10M80CG-TR

I²PAK

– package capacitance: 45 pF

STPS10M80CR

Description

This dual diode Schottky rectifier is suited for high

frequency switch mode power supply.

Packaged in TO-220AB, I PAK, D PAK and TO-

220FPAB, this device is particularly suited for use

in notebook, game station, LCD TV and desktop

adapters, providing these applications with a

good efficiency at both low and high load.

TO-220AB

TO-220FPAB

STPS10M80CFP

STPS10M80CT

(a)

Figure 1.

Electrical characteristics

Table 1.

Device summary

Symbol

I_F(AV)

V_RRM

Value

"Forward"

2 x 5 A

80 V

2 x I

T_j(max)

V_F(typ)

175 °C

465 mV

RRM

F F(2xI

F(I

)

"Reverse"

a. V_ARMand I_ARMmust respect the reverse safe

operating area defined in Figure 13. V_ARand I_ARare

pulse measurements (t_p< 1 µs). V_R, I_R, V_RRMand V_F,

are static characteristics

April 2011

Doc ID 018734 Rev 1

1/11

www.st.com

12 3 4 5 6 7...11

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