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STPS1150M PDF预览

STPS1150M

更新时间: 2024-11-18 13:14:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管PC
页数 文件大小 规格书
7页 105K
描述
1A 150 V power Schottky rectifier

STPS1150M 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:S-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-216AA
JESD-30 代码:S-PDSO-G2元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:150 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS1150M 数据手册

 浏览型号STPS1150M的Datasheet PDF文件第2页浏览型号STPS1150M的Datasheet PDF文件第3页浏览型号STPS1150M的Datasheet PDF文件第4页浏览型号STPS1150M的Datasheet PDF文件第5页浏览型号STPS1150M的Datasheet PDF文件第6页浏览型号STPS1150M的Datasheet PDF文件第7页 
STPS1150  
Power Schottky rectifier  
Main product characteristics  
IF(AV)  
VRRM  
1 A  
150 V  
175° C  
0.67 V  
Tj (max)  
VF(max)  
Description  
SMA  
DO-41  
(JEDEC DO-214AC)  
STPS1150A  
150 V Power Schottky rectifier are suited for  
switch mode power supplies on up to 24 V rails  
and high frequency converters.  
STPS1150  
Packaged in SMA and Axial, this device is  
intended for use in consumer and computer  
applications like TV, STB, PC and DVD where low  
drop forward voltage is required to reduce power  
dissipation.  
Features and benefits  
Negligible switching losses  
Low forward voltage drop for higher efficiency  
Order Codes  
and extented battery life  
Low thermal resistance  
Part Number  
Marking  
Surface mount miniature package  
Avalanche capability specified  
STPS1150A  
STPS1150  
1150  
STPS1150  
STPS1150  
STPS1150RL  
Table 1.  
Symbol  
VRRM  
Absolute Ratings (limiting values)  
Parameter  
Value  
Unit  
Repetitive peak reverse voltage  
150  
15  
V
A
IF(RMS) RMS forward voltage  
SMA  
TL = 160° C δ = 0.5  
TL = 150° C δ = 0.5  
A
A
IF(AV)  
Average forward current  
1
DO-41  
SMA  
50  
75  
Surge non repetitive forward  
current  
IFSM  
tp = 10 ms sinusoidal  
tp = 1µs Tj = 25° C  
DO-41  
PARM  
Tstg  
Repetitive peak avalanche power  
Storage temperature range  
1500  
W
-65 to + 150  
175  
° C  
° C  
Tj  
Maximum operating junction temperature(1)  
dPtot  
dTj  
1
1. --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
May 2006  
Rev 4  
1/7  
www.st.com  
7

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