STN749

更新时间： 2024-11-08 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
6页	127K
描述
MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

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数据手册

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STN749 数据手册

STN749

MEDIUM CURRENT, HIGH PERFORMANCE,

LOW VOLTAGE PNP TRANSISTOR

Ordering Code

Marking

STN749

N749

■

VERY LOW COLLECTOR TO EMITTER

SATURATION VOLTAGE

■

DC CURRENT GAIN, h_FE> 100

3 A CONTINUOUS COLLECTOR CURRENT

SOT-223 PLASTIC PACKAGE FOR

SURFACE MOUNTING CIRCUITS

AVAILABLE IN TAPE AND REEL PACKING

■

APPLICATIONS

SOT-223

■

POWER MANAGEMENT IN PORTABLE

EQUIPMENT

VOLTAGE REGULATION IN BIAS SUPPLY

CIRCUITS

SWITCHING REGULATOR IN BATTERY

CHARGER APPLICATIONS

HEAVY LOAD DRIVER

INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The device is manufactured in low voltage PNP

Planar Technology by using a "Base Island"

layout.

The resulting Transistor shows exceptional high

gain performance coupled with very low

saturation voltage.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

-35

-25

-5

-3

-6

I_CM

Collector Peak Current (t_p< 5 ms)

Total Dissipation at T_amb= 25 ^oC

Storage Temperature

P_tot

1.6

^oC

T_stg

-65 to 150

150

T_j

Max. Operating Junction Temperature

1/6

March 2003

12 3 4 5 6

中文翻译

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