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STK12C68-5K25M PDF预览

STK12C68-5K25M

更新时间: 2024-10-27 23:11:03
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
13页 371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK12C68-5K25M 数据手册

 浏览型号STK12C68-5K25M的Datasheet PDF文件第3页浏览型号STK12C68-5K25M的Datasheet PDF文件第4页浏览型号STK12C68-5K25M的Datasheet PDF文件第5页浏览型号STK12C68-5K25M的Datasheet PDF文件第7页浏览型号STK12C68-5K25M的Datasheet PDF文件第8页浏览型号STK12C68-5K25M的Datasheet PDF文件第9页 
STK12C68  
AutoStore™/POWER-UP RECALL  
(VCC = 5.0V ± 10%)e  
SYMBOLS  
STK12C68  
NO.  
PARAMETER  
UNITS NOTES  
Standard  
Alternate  
MIN  
MAX  
550  
10  
27  
28  
29  
30  
31  
32  
t
t
t
t
Power-up RECALL Duration  
STORE Cycle Duration  
µs  
ms  
ns  
µs  
V
s
RESTORE  
STORE  
VSBL  
t
t
p, q, t  
HLHZ  
BLQZ  
Low Voltage Trigger (V  
) to HSB Low  
300  
l
SWITCH  
Time Allowed to Complete SRAM Cycle  
Low Voltage Trigger Level  
1
p
DELAY  
V
V
4.0  
4.5  
3.9  
SWITCH  
RESET  
Low Voltage Reset Level  
V
Note s: tRESTORE starts from the time VCC rises above VSWITCH  
.
Note t: HSB is asserted low for 1µs when VCAP drops through VSWITCH. If an SRAM WRITE has not taken place since the last nonvolatile cycle, HSB  
will be released and no STORE will take place.  
AutoStore™/POWER-UP RECALL  
V
CC  
31  
V
SWITCH  
32  
V
RESET  
TM  
AutoStore  
POWER-UP RECALL  
29  
28  
27  
t
VSBL  
t
t
STORE  
RESTORE  
HSB  
30  
t
DELAY  
W
DQ (DATA OUT)  
POWER-UP  
RECALL  
BROWN OUT  
NO STORE  
(NO SRAM WRITES)  
BROWN OUT  
AutoStore™  
BROWN OUT  
AutoStore™  
NO RECALL  
NO RECALL  
RECALL WHEN  
(V DID NOT GO  
(V DID NOT GO  
V
RETURNS  
CC  
CC  
CC  
BELOW V  
)
BELOW V  
)
ABOVE V  
SWITCH  
RESET  
RESET  
October 2003  
6
Document Control # ML0008 rev 0.4  
 
 

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