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STK12C68-5K25M PDF预览

STK12C68-5K25M

更新时间: 2024-10-27 23:11:03
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
13页 371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK12C68-5K25M 数据手册

 浏览型号STK12C68-5K25M的Datasheet PDF文件第1页浏览型号STK12C68-5K25M的Datasheet PDF文件第2页浏览型号STK12C68-5K25M的Datasheet PDF文件第3页浏览型号STK12C68-5K25M的Datasheet PDF文件第5页浏览型号STK12C68-5K25M的Datasheet PDF文件第6页浏览型号STK12C68-5K25M的Datasheet PDF文件第7页 
STK12C68  
SRAM WRITE CYCLES #1 & #2  
(VCC = 5.0V ± 10%)e  
SYMBOLS  
STK12C68-25 STK12C68-35 STK12C68-45 STK12C68-55  
NO.  
PARAMETER  
UNITS  
#1  
#2  
Alt.  
MIN  
25  
20  
20  
10  
0
MAX  
MIN  
35  
25  
25  
12  
0
MAX  
MIN  
45  
30  
30  
15  
0
MAX  
MIN  
55  
45  
45  
25  
0
MAX  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
t
t
t
WC  
Write Cycle Time  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
AVAV  
AVAV  
t
t
t
Write Pulse Width  
WLWH  
WLEH  
WP  
CW  
DW  
t
t
t
t
Chip Enable to End of Write  
Data Set-up to End of Write  
Data Hold after End of Write  
Address Set-up to End of Write  
Address Set-up to Start of Write  
Address Hold after End of Write  
Write Enable to Output Disable  
Output Active after End of Write  
ELWH  
DVWH  
WHDX  
ELEH  
DVEH  
EHDX  
t
t
t
t
t
DH  
AW  
t
t
t
20  
0
25  
0
30  
0
45  
0
AVWH  
AVEH  
t
t
t
AVWL  
AVEL  
EHAX  
AS  
t
t
t
0
0
0
0
WHAX  
WR  
i, j  
t
t
10  
13  
14  
15  
WLQZ  
WZ  
t
t
5
5
5
5
WHQX  
OW  
Note j: If W is low when E goes low, the outputs remain in the high-impedance state.  
Note k: E or W must be VIH during address transitions.  
Note l: HSB must be high during SRAM WRITE cycles.  
SRAM WRITE CYCLE #1: W Controlledk, l  
12  
t
AVAV  
ADDRESS  
19  
14  
t
WHAX  
t
ELWH  
E
17  
t
AVWH  
18  
t
AVWL  
13  
t
W
WLWH  
15  
16  
t
t
DVWH  
WHDX  
DATA IN  
DATA VALID  
20  
t
WLQZ  
21  
t
WHQX  
HIGH IMPEDANCE  
DATA OUT  
PREVIOUS DATA  
SRAM WRITE CYCLE #2: E Controlledk, l  
12  
t
AVAV  
ADDRESS  
14  
18  
19  
t
t
ELEH  
t
AVEL  
EHAX  
E
17  
t
AVEH  
13  
t
WLEH  
W
15  
16  
t
DVEH  
t
EHDX  
DATA IN  
DATA VALID  
HIGH IMPEDANCE  
DATA OUT  
October 2003  
4
Document Control # ML0008 rev 0.4  
 
 
 
 

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