5秒后页面跳转
STK12C68-5C55M PDF预览

STK12C68-5C55M

更新时间: 2024-02-02 14:30:05
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
18页 575K
描述
64 Kbit (8K x 8) AutoStore nvSRAM

STK12C68-5C55M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:WDIP, DIP28,.3Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:8.66Is Samacsys:N
最长访问时间:35 ns其他特性:RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES
JESD-30 代码:R-CDIP-T28JESD-609代码:e0
长度:35.56 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:WDIP封装等效代码:DIP28,.3
封装形状:RECTANGULAR封装形式:IN-LINE, WINDOW
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
座面最大高度:4.14 mm最大待机电流:0.004 A
子类别:SRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn85Pb15)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

STK12C68-5C55M 数据手册

 浏览型号STK12C68-5C55M的Datasheet PDF文件第1页浏览型号STK12C68-5C55M的Datasheet PDF文件第2页浏览型号STK12C68-5C55M的Datasheet PDF文件第3页浏览型号STK12C68-5C55M的Datasheet PDF文件第5页浏览型号STK12C68-5C55M的Datasheet PDF文件第6页浏览型号STK12C68-5C55M的Datasheet PDF文件第7页 
STK12C68-5 (SMD5962-94599)  
Figure 4. AutoStore Inhibit Mode  
During any STORE operation, regardless of how it is initiated,  
the STK12C68-5 continues to drive the HSB pin LOW,  
releasing it only when the STORE is complete. After  
completing the STORE operation, the STK12C68-5 remains  
disabled until the HSB pin returns HIGH.  
9
&$3  
9FF  
:(  
If HSB is not used, it is left unconnected.  
Hardware RECALL (Power Up)  
+6%  
During power up or after any low power condition (VCC  
<
VRESET), an internal RECALL request is latched. When VCC  
once again exceeds the sense voltage of VSWITCH, a RECALL  
cycle is automatically initiated and takes tHRECALL to complete.  
If the STK12C68-5 is in a Write state at the end of power up  
RECALL, the SRAM data is corrupted. To help avoid this  
situation, a 10 Kohm resistor is connected either between WE  
and system VCC or between CE and system VCC  
.
Software STORE  
Data is transferred from the SRAM to the nonvolatile memory  
by a software address sequence. The STK12C68-5 software  
STORE cycle is initiated by executing sequential CE controlled  
Read cycles from six specific address locations in exact order.  
During the STORE cycle, an erase of the previous nonvolatile  
data is first performed followed by a program of the nonvolatile  
elements. When a STORE cycle is initiated, input and output  
are disabled until the cycle is completed.  
9VV  
If the power supply drops faster than 20 us/volt before Vcc  
reaches VSWITCH, then a 2.2 ohm resistor must be connected  
between VCC and the system supply to avoid momentary  
Because a sequence of Reads from specific addresses is  
used for STORE initiation, it is important that no other Read or  
Write accesses intervene in the sequence. If they intervene,  
the sequence is aborted and no STORE or RECALL takes  
place.  
excess of current between VCC and VCAP  
.
AutoStore Inhibit Mode  
If an automatic STOREon power loss is not required, then VCC  
is tied to ground and +5V is applied to VCAP (Figure 4). This is  
the AutoStore Inhibit mode, where the AutoStore function is  
disabled. If the STK12C68-5 is operated in this configuration,  
references to VCC are changed to VCAP throughout this data  
sheet. In this mode, STORE operations are triggered through  
software control or the HSB pin. To enable or disable Autostore  
using an IO port pin see Preventing Store on page 5. It is not  
permissible to change between these three options “on the  
fly”.  
To initiate the software STORE cycle, the following Read  
sequence is performed:  
1. Read address 0x0000, Valid READ  
2. Read address 0x1555, Valid READ  
3. Read address 0x0AAA, Valid READ  
4. Read address 0x1FFF, Valid READ  
5. Read address 0x10F0, Valid READ  
6. Read address 0x0F0F, Initiate STORE cycle  
Hardware STORE (HSB) Operation  
The software sequence is clocked with CE controlled Reads  
or OE controlled Reads. When the sixth address in the  
sequence is entered, the STORE cycle commences and the  
chip is disabled. It is important that Read cycles and not Write  
cycles are used in the sequence. It is not necessary that OE  
is LOW for a valid sequence. After the tSTORE cycle time is  
fulfilled, the SRAM is again activated for Read and Write  
operation.  
The STK12C68-5 provides the HSB pin for controlling and  
acknowledging the STORE operations. The HSB pin is used  
to request a hardware STORE cycle. When the HSB pin is  
driven LOW, the STK12C68-5 conditionally initiates a STORE  
operation after tDELAY. An actual STORE cycle only begins if a  
Write to the SRAM takes place since the last STORE or  
RECALL cycle. The HSB pin also acts as an open drain driver  
that is internally driven LOW to indicate a busy condition, while  
the STORE (initiated by any means) is in progress.  
Software RECALL  
Data is transferred from the nonvolatile memory to the SRAM  
by a software address sequence. A software RECALL cycle is  
initiated with a sequence of Read operations in a manner  
similar to the software STORE initiation. To initiate the  
RECALL cycle, the following sequence of CE controlled Read  
operations is performed:  
SRAM Read and Write operations, that are in progress when  
HSB is driven LOW by any means, are given time to complete  
before the STORE operation is initiated. After HSB goes LOW,  
the STK12C68-5 continues SRAM operations for tDELAY  
.
During tDELAY, multiple SRAM Read operations take place. If  
a Write is in progress when HSB is pulled LOW, it allows a  
time, tDELAY to complete. However, any SRAM Write cycles  
requested after HSB goes LOW are inhibited until HSB returns  
HIGH.  
1. Read address 0x0000, Valid READ  
2. Read address 0x1555, Valid READ  
3. Read address 0x0AAA, Valid READ  
Document Number: 001-51026 Rev. **  
Page 4 of 18  
[+] Feedback  

与STK12C68-5C55M相关器件

型号 品牌 描述 获取价格 数据表
STK12C68-5CF25 ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格

STK12C68-5CF25I ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格

STK12C68-5CF25M ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格

STK12C68-5CF35 ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格

STK12C68-5CF35I ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格

STK12C68-5CF35M ETC 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No

获取价格