Datasheet > STD22NM20N_05

STD22NM20N_05

更新时间： 2024-09-16 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
10页	504K
描述
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

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STD22NM20N_05 数据手册

STD22NM20N

N-CHANNEL 200V - 0.088Ω - 22A DPAK

ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STD22NM20N

200 V

< 0.105 Ω

22 A

■ WORLDWIDE LOWEST GATE CHARGE

■ TYPICAL R (on) = 0.088 Ω

■ HIGH dv/dt and AVALANCHE CAPABILITIES

■ LOW INPUT CAPACITANCE

■ LOW GATE RESISTANCE

DESCRIPTION

DPAK

This 200V MOSFET with a new advanced layout

brings all unique advantages of MDmesh technol-

ogy to lower voltages. The device exhibits world-

wide lowest gate charge for any given on-

resistance. Its use is therefore ideal as primary

switch in isolated DC-DC converters for Telecom

and Computer applications. Used in combination

with secondary-side low-voltage STripFET™

products, it contributes to reducting losses and

boosting effeciency.

Figure 2: Internal Schematic Diagram

APPLICATIONS

The MDmesh™ family is very suitable for increas-

ing power density allowing system miniaturization

and higher efficiencies

Table 2: Order Codes

SALES TYPE

MARKING

PACKAGE

PACKAGING

STD22NM20NT4

D22NM20N

DPAK

TAPE & REEL

Rev. 5

November 2005

1/10

12 3 4 5 6 7...10

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