Datasheet > STD1NB60

STD1NB60

更新时间： 2024-09-29 22:10:11

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意法半导体 - STMICROELECTRONICS		/
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描述
N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

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STD1NB60 数据手册

STD1NB60

N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK

PowerMESH MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STD1NB60

600 V

< 8.5 Ω

1 A

■

TYPICAL R_DS(on)= 7.4 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R_DS(on)per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

600

Drain- gate Voltage (R_GS= 20 k

Gate-source Voltage

)

Ω

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

0.63

I_DM( )

Drain Current (pulsed)

Total Dissipation at T_c= 25 ^oC

Derating Factor

•

P_tot

0.36

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

3.5

T_stg

Storage Temperature

-65 to 150

T_j

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤1 Α, di/dt â 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/6

November 1999

12 3 4 5 6

中文翻译

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与STD1NB60相关器件

型号	品牌	获取价格	描述	数据表
STD1NB60-1	STMICROELECTRONICS	获取价格	1A, 600V, 8.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
STD1NB60T4	STMICROELECTRONICS	获取价格	1A, 600V, 8.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD1NB80	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
STD1NB80-	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
STD1NB80-1	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
STD1NB80T4	STMICROELECTRONICS	获取价格	1A, 800V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD1NC40-1	STMICROELECTRONICS	获取价格	N - CHANNEL 400V- 8ohm - 1A - IPAK PowerMESH II MOSFET
STD1NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK Powe
STD1NC70Z	STMICROELECTRONICS	获取价格	N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK
STD1NC70Z-1	STMICROELECTRONICS	获取价格	N-CHANNEL 700V - 7.3ohm - 1.4A TO-220/FP/DPAK