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STD1NK60T4 PDF预览

STD1NK60T4

更新时间: 2024-11-01 22:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
13页 749K
描述
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

STD1NK60T4 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.68Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:180111
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:OtherSamacsys Footprint Name:STD1NK60T4-2
Samacsys Released Date:2017-03-09 12:44:44Is Samacsys:N
雪崩能效等级(Eas):25 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 A最大漏源导通电阻:8.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD1NK60T4 数据手册

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STD1NK60 - STD1NK60-1  
STQ1HNK60R  
N-CHANNEL 600V - 8- 1A DPAK / IPAK / TO-92  
SuperMESH™Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STD1NK60  
STD1NK60-1  
STQ1HNK60R  
600 V  
600 V  
600 V  
< 8.5 Ω  
< 8.5 Ω  
< 8.5 Ω  
1 A  
1 A  
0.4 A  
30 W  
30 W  
3 W  
3
3
2
1
1
IPAK  
DPAK  
TYPICAL R (on) = 8 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
NEW HIGH VOLTAGE BENCHMARK  
TO-92 (Ammopack)  
TO-92  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SWITCH MODE LOW POWER SUPPLIES  
(SMPS)  
LOW POWER, LOW COST CFL (COMPACT  
FLUORESCENT LAMPS)  
LOW POWER BATTERY CHARGERS  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
D1NK60  
PACKAGE  
PACKAGING  
TAPE & REEL  
TUBE  
STD1NK60T4  
STD1NK60-1  
DPAK  
IPAK  
D1NK60  
STQ1HNK60R  
STQ1HNK60R-AP  
1HNK60R  
1HNK60R  
TO-92  
TO-92  
BULK  
AMMOPAK  
June 2003  
1/13  

STD1NK60T4 替代型号

型号 品牌 替代类型 描述 数据表
FQD1N60CTM FAIRCHILD

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Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Meta
FQD1N60TF FAIRCHILD

功能相似

Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Meta
IRFR1N60ATRPBF VISHAY

功能相似

Power MOSFET

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