生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.72 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 25 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 8.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 4 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD1NK60_08 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT- |
![]() |
STD1NK60-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
![]() |
STD1NK60T4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
![]() |
STD1NK80Z | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DP |
![]() |
STD1NK80Z-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DP |
![]() |
STD1NK80ZT4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DP |
![]() |
STD2 | COOPER |
获取价格 |
Circuit Protection Solutions Low Voltage Fuse Links Catalogue |
![]() |
STD20 | COOPER |
获取价格 |
Circuit Protection Solutions Low Voltage Fuse Links Catalogue |
![]() |
STD200 | LITTELFUSE |
获取价格 |
This axial leaded strap product is designed to provide reliable, non-cycling protection fo |
![]() |
STD200 | SIRECTIFIER |
获取价格 |
Thyristor-Diode Modules, Diode-Thyristor Modules |
![]() |