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STD1NB80- PDF预览

STD1NB80-

更新时间: 2024-09-29 22:29:11
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意法半导体 - STMICROELECTRONICS /
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5页 58K
描述
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET

STD1NB80- 数据手册

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STD1NB80-1  
N - CHANNEL 800V - 16- 1A - IPAK  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STD1NB80-1  
800 V  
< 20 Ω  
1 A  
TYPICAL RDS(on) = 16 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
2
DESCRIPTION  
1
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
IPAK  
TO-251  
(Suffix "-1")  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SWITCH MODE POWER SUPPLIES (SMPS)  
AC ADAPTORS AND BATTERY CHARGERS  
FOR HANDHELD EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
800  
Unit  
Drain-source Voltage (VGS = 0)  
V
V
800  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
± 30  
1
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
0.63  
4
A
I
DM()  
Drain Current (pulsed)  
Total Dissipation at Tc = 25 oC  
Derating Factor  
A
Ptot  
50  
W
0.4  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4.5  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD ≤ 1Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/5  
September 1998  

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