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STD1NB80 PDF预览

STD1NB80

更新时间: 2024-02-27 13:18:01
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 68K
描述
N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET

STD1NB80 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69雪崩能效等级(Eas):90 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):1 A最大漏源导通电阻:20 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):4 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD1NB80 数据手册

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STD1NB80  
N - CHANNEL 800V - 16- 1A - DPAK/IPAK  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STD1NB80  
800 V  
< 20 Ω  
1 A  
TYPICAL RDS(on) = 16 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
ADD SUFFIX "T4" FOR ORDERING IN  
TAPE&REEL  
3
1
3
2
1
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SWITCH MODE POWER SUPPLIES (SMPS)  
AC ADAPTORS AND BATTERY CHARGERS  
FOR HANDHELD EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
800  
Unit  
Drain-source Voltage (VGS = 0)  
V
V
800  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
± 30  
1
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
0.63  
4
A
I
DM()  
Drain Current (pulsed)  
Total Dissipation at Tc = 25 oC  
Derating Factor  
A
Ptot  
50  
W
0.4  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4.5  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD ≤ 1Α, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/6  
May 1999  

STD1NB80 替代型号

型号 品牌 替代类型 描述 数据表
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