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STD15N06-1 PDF预览

STD15N06-1

更新时间: 2024-11-09 20:28:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
10页 368K
描述
15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

STD15N06-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
Is Samacsys:N雪崩能效等级(Eas):50 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD15N06-1 数据手册

 浏览型号STD15N06-1的Datasheet PDF文件第2页浏览型号STD15N06-1的Datasheet PDF文件第3页浏览型号STD15N06-1的Datasheet PDF文件第4页浏览型号STD15N06-1的Datasheet PDF文件第5页浏览型号STD15N06-1的Datasheet PDF文件第6页浏览型号STD15N06-1的Datasheet PDF文件第7页 
STD15N06  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
< 0.1 Ω  
ID  
STD15N06  
60 V  
15 A  
TYPICAL RDS(on) = 0.075 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
2
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
APPLICATION ORIENTED  
1
1
CHARACTERIZATION  
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX "-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
60  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
V
± 20  
15  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
10  
A
I
DM()  
Drain Current (pulsed)  
60  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
50  
W
Derating Factor  
0.33  
-65 to 175  
175  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
February 1995  

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STD15N50M2AG STMICROELECTRONICS

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STD15N60DM6 STMICROELECTRONICS

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STD15NF10 STMICROELECTRONICS

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STD15NF10L UMW

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种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C
STD15NF10T4 STMICROELECTRONICS

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