Datasheet > STD15N06T4

STD15N06T4

更新时间： 2024-11-28 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	170K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 15A I(D) \| TO-252

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中文翻译

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数据手册

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STD15N06T4 数据手册

STD15N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

< 0.1 Ω

I_D

STD15N06

60 V

15 A

■

TYPICAL R_DS(on)= 0.075 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_{DG R}

V_GS

± 20

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.33

-65 to 175

175

W/^oC

^oC

T_stg

T_j

Storage Temperature

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

February 1995

12 3 4 5 6 7...10

中文翻译

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