STC722D

更新时间： 2024-09-20 09:01:11

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
4页	241K
描述
NPN Silicon Transistor

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STC722D 数据手册

STC722D

NPN Silicon Transistor

Description

• General purpose amplifier

PIN Connection

• Surface mount applications

Features

• P_C(Collector dissipation)=15W

• Low speed switching applications

• Complementary pair with STA723D

TO-252

Ordering Information

Type NO.

Marking

STC722

Package Code

STC722D

TO-252

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

V_CBO

V_CEO

V_EBO

I_C

A(DC)

Collector current

I_CP

P_C

A(Pulse)

Collector Power dissipation (Tc=25℃)

Junction temperature

°C

T_j

150

Storage temperature

T_stg

-55~150

* : Single pulse, tp= 300 ㎲

Electrical Characteristics

(Ta=25°C)

Characteristic

Symbol

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_C=50μA, I_C=0

V_CB=20V, I_E=0

V_EB=4V, I_C=0

μA

Emitter cut-off current

I_EBO

V_CE=3V, I_C=500mA

V_CE=3V, I_C=3A

V_CE=2A, I_C= 200mA

390

DC current gain

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

0.5

0.8

V_CE=5V, I_C=500mA,

f=1MHz

120

MHz

Collector output capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

* : h_FErank / O : 80~218, Y : 120~270, G : 180~390

KSD-T6O019-001

12 3 4

中文翻译

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