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STBV68 PDF预览

STBV68

更新时间: 2024-09-12 22:20:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关小信号双极晶体管高压
页数 文件大小 规格书
4页 44K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV68 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:TO-92, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):3
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STBV68 数据手册

 浏览型号STBV68的Datasheet PDF文件第2页浏览型号STBV68的Datasheet PDF文件第3页浏览型号STBV68的Datasheet PDF文件第4页 
STBV68  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
MEDIUM VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
TO-92  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The STBV68 is designed for use in compact  
fluorescent lamp application.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
600  
Unit  
V
V
400  
9
V
0.6  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
1.2  
A
IB  
0.3  
A
IBM  
Base Peak Current (tp < 5 ms)  
0.6  
A
o
Ptot  
Total Dissipation at Tamb = 25 C  
0.9  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
September 2000  

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