Datasheet > STB13005

STB13005

更新时间： 2024-11-05 21:53:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
8页	81K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

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中文翻译

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数据手册

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STB13005 数据手册

ST13005

STB13005-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

■

MEDIUM VOLTAGE CAPABILITY

NPN TRANSISTORS

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLEOPERATION

■

VERY HIGH SWITCHING SPEED

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGEIN TUBE (SUFFIX ”-1”)

APPLICATIONS:

■

ELECTRONIC BALLASTSFOR

FLUORESCENT LIGHTING

TO-220

I2PAK

TO-262

(Suffix ”-1”)

■

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The devices are is manufactured using high

voltage Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

They use a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

700

400

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

T_stg

T_j

Total Dissipation at T_c= 25 C

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/8

January 1999

12 3 4 5 6 7 8

中文翻译

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