Datasheet > STB13005_07

STB13005_07

更新时间： 2024-11-06 06:14:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
11页	208K
描述
High voltage fast-switching NPN power transistor

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STB13005_07 数据手册

STB13005

High voltage fast-switching

NPN power transistor

Features

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ Through hole TO-262 (I PAK) power package

in tube (suffix “-1”)

Applications

I²PAK

■ Electronic ballast for fluorescent lighting

■ Switch mode power supplies

Description

Figure 1.

Internal schematic diagram

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

Table 1.

Device summary

Marking ⁽¹⁾

Order code

Package

Packaging

B13005A

B13005B

I²PAK

STB13005-1

Tube

1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either

groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

October 2007

Rev 1

1/11

www.st.com

12 3 4 5 6 7...11

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