Datasheet > STA3250F

STA3250F

更新时间： 2024-11-06 09:01:35

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	374K
描述
PNP Silicon Transistor

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STA3250F 数据手册

STA3250F

PNP Silicon Transistor

Applications

• Power amplifier application

PIN Connection

• High current switching application

Features

• Low saturation voltage:

V_CE(sat)=-0.15V Typ @ I_C=-1A, I_B=-50mA

• Large collector current capacity: I_C=-2A

• Small and compact SMD type package

• Complementary pair with STC4250F

SOT-89

Ordering Information

Type NO.

Marking

Package Code

HW1

YWW

STA3250F

SOT-89

HW1: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)

Absolute Maximum Ratings

[Ta=25℃]

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

-50

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

-5

-2

P_C

0.5

°C

Collector Power dissipation

P_C*

Junction temperature

T_J

150

-55~150

Storage temperature range

T_stg

Characteristic

Symbol

Typ.

Max

Unit

R_th(J-A)

250.0

125.0

℃/W

Thermal resistance Junction-ambient

R_th(J-A)

* : When mounted on ceramic substrate(250 ㎟×0.8t)

KSD-T5B005-004

12 3 4 5 6

中文翻译

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