Datasheet > ST8050

ST8050

更新时间： 2024-09-14 09:01:59

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	148K
描述
NPN Silicon Epitaxial Planar Transistor

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ST8050 数据手册

ST 8050 (1.5A)

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

Especially suitable for AF-driver stages

and low power output stages.

On special request, these transistors can be

manufactured in different pin configurations.

1.Emitter 2.Base 3.Collector

TO-92 Plastic Package

Weight approx. 019g

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

1.5

Power Dissipation

P_tot

T_j

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 5 mA

at V_CE= 1 V, I_C= 100 mA

h_FE

120

160

8050C

8050D

200

300

at V_CE= 1 V, I_C= 800 mA

Collector Cutoff Current

at V_CB= 35 V

I_CBO

I_EBO

100

Emitter Cutoff Current

at V_BE= 6 V

100

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

V_BE

Collector Emitter Breakdown Voltage

at I_C= 2 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Emitter Saturation Voltage

at I_C= 800 mA, I_B= 80 mA

0.5

1.2

Base Emitter Saturation Voltage

at I_C= 800 mA, I_B= 80 mA

Base Emitter Voltage

at I_C= 10 mA, V_CE= 1 V

Gain Bandwidth Product

at V_CE= 10 V, I_C= 50 mA

f_T

120

MHz

Collector Base Capacitance

at V_CB= 10 V, f = 1 MHz

C_OB

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 13/03/2007

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